Apparatus and Method for Controlling Plasma Density Profile

ABSTRACT

A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

CLAIM OF PRIORITY

This application is a divisional application of U.S. patent applicationSer. No. 11/303,729, filed on Dec. 16, 2005, the disclosure of which isincorporated in its entirety herein by reference.

BACKGROUND

Semiconductor wafer (“wafer”) fabrication often includes exposing awafer to a plasma to allow the reactive constituents of the plasma tomodify the surface of the wafer, e.g., remove material from unprotectedareas of the wafer surface. The wafer characteristics resulting from theplasma fabrication process are dependent on the process conditions,including the plasma density profile across the wafer surface. It shouldbe appreciated that differences in plasma density profile duringprocessing of different wafers will result in different wafer surfacecharacteristics. Thus, a drift in process results between differentwafers can be caused by variations in the plasma density profile.Additionally, because an amount of reaction between the plasma and aparticular portion of the wafer surface is directly proportional to theplasma density over the particular portion of the wafer surface,variations in the plasma density profile can result in center-to-edgewafer uniformity problems. Such center-to-edge wafer uniformity problemscan adversely effect a die yield per wafer.

Some objectives in wafer fabrication include optimizing a die yield perwafer and fabricating each wafer of a common type in as identical amanner as possible. To meet these objectives, it is desirable to controlthe uniformity of features across an individual wafer and among variouswafers of a common type. Previous plasma processing techniques haveattempted to control wafer uniformity in an indirect manner bycompensating for an uncontrolled plasma density profile overlying thewafer surface. Such compensation has been provided through control ofvarious process parameters, such as reactant gas flow and wafertemperature, that influence reactions between the plasma and the wafer,but do not directly control the plasma density profile overlying thewafer surface. A solution is needed to enable more direct control of theplasma density profile overlying the wafer surface such that waferuniformity can be controlled in a more direct manner.

SUMMARY

In one embodiment, a plasma processing system for semiconductor waferprocessing is disclosed. The system includes a radiofrequency (RF) powersource and a matching network connected to the RF power source. Atransmit electrode is connected to the matching network and is definedto transmit RF power to a plasma to be generated within a volume. Anumber of RF power transmission paths extend from the RF power sourcethrough the matching network, through the transmit electrode, throughthe plasma to a number of return electrodes. The system also includes anumber of tuning elements respectively disposed within the number of RFpower transmission paths. Each of the number of tuning elements isdefined to adjust an amount of RF power to be transmitted through the RFpower transmission path within which the tuning element is disposed. Aplasma density within a vicinity of a particular RF power transmissionpath is directly proportional to the amount of RF power transmittedthrough the particular RF power transmission path during operation ofthe plasma processing system.

In another embodiment, a method is disclosed for controlling a plasmadensity profile relative to a substrate. The method includes applying RFpower to a reactant gas to generate a plasma over a top surface of asubstrate. The method also includes controlling an amount of RF powertransmitted through each of a number of RF power transmission paths. TheRF power transmission paths are spatially dispersed throughout theplasma relative to the top surface of the substrate. Controlling theamount of RF power transmitted through a particular RF powertransmission path causes a plasma density within a vicinity of theparticular RF power transmission path to be proportionally controlled.

In another embodiment, a system for controlling a plasma density profilerelative to a substrate is disclosed. The system includes a plasmaprocessing chamber within which RF power is to be applied to a reactantgas to generate a plasma over a top surface of a substrate. The systemalso includes an RF power source for generating the RF power. A matchingnetwork is also provided for matching an impedance of the RF power to besupplied to the plasma processing chamber. Within the system, a numberof RF power transmission paths extend from the RF power source throughthe matching network, through a transmit electrode, through the plasmato a number of return electrodes. The amount of RF power transmittedalong a particular RF power transmission path directly influences aplasma density within a vicinity of the particular RF power transmissionpath. The system further includes a number of RF power tuning elementsrespectively disposed within the number of RF power transmission paths.Each RF power tuning element is capable of adjusting an amount of RFpower transmitted along the RF power transmission path within which thetuning element is disposed. Additionally, the system includes acomputing system defined to receive plasma density profile monitoringsignals from the plasma chamber. The computing system is further definedto generate and transmit control signals to the RF power tuning elementsto adjust the plasma density within the vicinity of each RF powertransmission path. The computing system controls the RF power tuningelements such that a plasma density profile over the top surface of thesubstrate is maintained in accordance with a target plasma densityprofile.

In another embodiment, a method is disclosed for controlling a plasmadensity profile relative to a substrate. The method includes anoperation for transmitting RF power from a transmit electrode to areactant gas to a number of return electrodes. Transmission of the RFpower to the reactant gas transforms the reactant gas into a plasma overa top surface of a substrate. A plurality of RF power transmission pathsare established from the transmit electrode to the number of returnelectrodes. The method also includes an operation for controlling anumber of tuning elements within each of the plurality of RF powertransmission paths to control an amount of RF power transmitted througheach of the plurality of RF power transmission paths. The number oftuning elements includes at least one adjustable capacitive element andat least one adjustable inductive element.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an illustration showing a plasma processing system forsemiconductor wafer processing, in accordance with one embodiment of thepresent invention;

FIG. 1B is an illustration showing the RF power generation andtransmission components of the plasma processing system, in accordancewith one embodiment of the present invention;

FIG. 2A is an illustration showing the RF power transmission paths beingcontrolled to provide a radially increasing plasma density profile, inaccordance with one exemplary embodiment of the present invention;

FIG. 2B is an illustration showing the RF power transmission paths beingcontrolled to provide a radially decreasing plasma density profile, inaccordance with one exemplary embodiment of the present invention;

FIG. 3 is an illustration showing a system for controlling a plasmadensity profile relative to a substrate, in accordance with oneembodiment of the present invention;

FIG. 4 is an illustration showing the results of the example plasmaprocess as a function of the adjustable capacitive element C1 setting;and

FIG. 5 is an illustration showing a flowchart of a method forcontrolling a plasma density profile relative to a substrate, inaccordance with one embodiment of the present invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

FIG. 1A is an illustration showing a plasma processing system 100 forsemiconductor wafer processing, in accordance with one embodiment of thepresent invention. The system 100 includes a plasma processing chamber(“chamber”) 101 within which a plasma 109 can be generated in exposureto a substrate 104. It should be understood that the substrate 104 canrepresent a semiconductor wafer or any other type of substrate withinwhich electronic elements are to be defined. The chamber 101 includes alower electrode 103 and an upper electrode 105. During operation,radiofrequency (RF) power is generated by an RF power source 117 andtransmitted through a matching network 115 to the lower electrode 103,via connections 118 and 127. It should be appreciated that the matchingnetwork 115 is defined to provide appropriate impedance matching toensure that the RF power is properly transmitted from the source 117 toa load. The RF power received at the lower electrode 103 is transmittedthrough the chamber 101 volume to the upper electrode 105, which isgrounded, and to ground extensions 107 located outside a periphery ofthe lower electrode 103.

During operation, a reactant gas is supplied to the chamber 101 volumein a controlled manner. The RF power transmitted from the lowerelectrode 103 through the chamber 101 volume, i.e., through the reactantgas, to the upper electrode 105 and ground extensions 107 serves totransform the reactant gas into the plasma 109. A density of the plasma109 at a particular location within chamber 101 is directly proportionalto an amount of RF power being transmitted through the particularlocation within the chamber 101. Therefore, increased RF powertransmission through a particular location within the chamber 101 willresult in an increased plasma 109 density at the particular locationwithin the chamber 101, vice-versa. A set of confinement rings 111 arepositioned within the chamber 101 to surround a volume overlying thesubstrate 104 between the lower and upper electrodes 103/105. Theconfinement rings 111 serve to confine the plasma 109 to the volumeoverlying the substrate 104. Additionally, some embodiments provide forcontrolled movement of the confinement rings 111 during operation toenable adjustment of reactant gas flow between the various confinementrings 111 in a direction toward or away from the volume overlying thesubstrate 104.

It should be appreciated that the plasma processing chamber 101 andsystem 100 includes many other features and components that are notdescribed herein to avoid unnecessarily obscuring the present invention.The present invention is primarily concerned with controlling a spatialvariation of the plasma 109 density within the chamber 101 bycontrolling RF power transmission paths through the chamber 101. Throughcontrol of the spatial variation of the plasma 109 density within thechamber 101, a spatial variation of an amount of reaction between theplasma 109 and the substrate 104 can be controlled. More specifically,by controlling the plasma 109 density to be increased over a particulararea of the substrate 104, the amount of reaction between the plasma 109and the particular area of the substrate 104 will be increased,vice-versa. Furthermore, because the uniformity of features definedacross the substrate 104, i.e., the uniformity of plasma processingresults across the substrate 104, is dependent upon the amount ofplasma-to-substrate reaction as a function of location on the substrate104 surface, the uniformity of features defined across the substrate 104can be directly controlled by controlling the spatial variation of theplasma 109 density over the substrate 104. Therefore, by controlling theRF power transmission paths through the chamber 101, the uniformity offeatures defined across the substrate 104 can be directly controlled.

FIG. 1B is an illustration showing the RF power generation andtransmission components of the plasma processing system 100, inaccordance with one embodiment of the present invention. As describedwith respect to FIG. 1A, the plasma processing system 100 includes thechamber 101, the lower electrode 103, the upper electrode 105, theground extensions 107, and the confinement rings 111. For ease ofillustration, the substrate 104 is not shown in FIG. 1B. However, withrespect to FIG. 1B and the remaining description provided herein, itshould be understood that the substrate 104 is supported on the lowerelectrode 103 in exposure to the plasma 109 during the plasma process.

In the embodiment of FIG. 1B, the RF power source 117 is represented bythree separate RF power sources 117A-117C, that are defined to generateRF power at a frequency of 60 MHz, 27 MHz, and 2 MHz, respectively. Itshould be appreciated that in other embodiments, the RF power source 117can be defined to generate RF power at either a different number offrequencies or at different frequency values than what are presented inthe exemplary embodiment of FIG. 1B. Also, it should be appreciated thatduring operation, the various RF power sources 117A-117C can be operatedin any combination, depending on what is necessary to satisfy processrequirements. Additionally, either of the RF power sources 117A-117C canbe turned off during a particular plasma process.

The RF power generated by the RF power sources 117A-117C is transmittedthrough the matching network 115 to the lower electrode 103, viaconnection 127. The matching network 115 includes a number of resistiveelements 125A-125E and capacitive elements 123A-123D that can each beadjusted to provide a required impedance matching for transmission of aparticular RF power source. The RF transmission path extending from theRF power source 117A to the connection 127 also includes an adjustablecapacitive element C1. The RF transmission path extending from the RFpower source 117B to the connection 127 also includes an adjustablecapacitive element C2. The RF transmission path extending from the RFpower source 117C to the connection 127 also includes an adjustablecapacitive element C3. Additionally, the RF transmission path extendingfrom the matching network 115 to the lower electrode 103, i.e., alongthe connection 127, includes adjustable inductive elements L2 and L3.Adjustable capacitive elements C4 and C5 are also connected between theRF transmission path extending from the matching network 115 to thelower electrode 103 and a ground potential.

The RF power arriving at the lower electrode 103 from the RF powersources 117A-117C is transmitted from the lower electrode 103 throughthe chamber volume to one or more grounded components within thechamber, such as the upper electrode 105 or the ground extensions 107.Thus, the lower electrode 103 is defined as a transmit electrode and thegrounded components, i.e., upper electrode 105 and ground extensions107, are defined as return electrodes. As the RF power is transmittedthrough the reactant gas, the plasma 109 is generated. The plasma 109 iscapacitively coupled to the lower electrode 103, the upper electrode105, and the ground extensions, as illustrated by capacitances113A-113C, respectively. In operation, a ground circuit is defined fromthe chamber 101 walls to a reference ground potential. In oneembodiment, an adjustable inductance L1 is provided within the groundcircuit extending from the chamber 101 walls to the reference groundpotential. Also, in one embodiment, an adjustable capacitance C6 isestablished between the lower electrode 103 and the above-mentionedground circuit. It should be appreciated that because RF power is beingtransmitted, the various adjustable inductive elements L1, L2, L3, andthe various adjustable capacitive elements C1, C2, C3, C4, C5, C6 aredefined by components which provide a corresponding inductive orcapacitive effect within the RF domain.

During operation, the various adjustable inductive elements L1, L2, L3,and the various adjustable capacitive elements C1, C2, C3, C4, C5, C6can be set to control a transmission path of the RF power through thechamber 101 internal volume. The various adjustable inductive elementsL1, L2, L3, and the various adjustable capacitive elements C1, C2, C3,C4, C5, C6 are collectively referred to as tuning elements. Duringoperation, each tuning element can be controlled to control an amount ofRF power transmitted through the RF power transmission path within whichthe tuning element is disposed. Therefore, because the local plasmadensity is directly proportional to the local RF power beingtransmitted, the various tuning elements can be used to manipulate aplasma density profile relative to the substrate. More specifically, thevarious tuning elements can be used to locally increase or decrease theplasma density overlying the substrate at various locations along adirection extending from the center of the substrate to the edge of thesubstrate. Such manipulation of the plasma density profile alsoinfluences a shape of the plasma overlying the substrate. Furthermore,such manipulation of the plasma density profile directly effects theamount of plasma-to-substrate reaction at various radial locationsextending from the center of the substrate to the edge of the substrate,and hence effects the resulting uniformity of the substrate.

FIG. 2A is an illustration showing the RF power transmission paths beingcontrolled to provide a radially increasing plasma density profile, inaccordance with one exemplary embodiment of the present invention. Inthe example embodiment of FIG. 2A, the RF power transmission paths (RP1)extending from the lower electrode 103 (transmit electrode) to theground extensions 107 (return electrodes) are controlled to transmitmore RF power than what is transmitted along other RF transmission pathsextending from lower electrode 103 to the upper electrode 105.Therefore, the increased RF power transmitted along the RF powertransmission paths (RP1) cause the plasma density overlying and toward aperiphery of the lower electrode 103, to be greater than the plasmadensity overlying and toward the center of the lower electrode 103.Consequently, there will be more plasma-to-substrate reaction at outerregions of the substrate relative to inner regions of the substrate.

FIG. 2B is an illustration showing the RF power transmission paths beingcontrolled to provide a radially decreasing plasma density profile, inaccordance with one exemplary embodiment of the present invention. Inthe example embodiment of FIG. 2B, the RF power transmission paths (RP2)extending from the lower electrode 103 (transmit electrode) to the upperelectrode 105 (return electrode) are controlled to transmit more RFpower than what is transmitted along other RF transmission pathsextending from lower electrode 103 to the ground extensions 107.Therefore, the increased RF power transmitted along the RF powertransmission paths (RP2) cause the plasma density overlying and towardthe center of the lower electrode 103, to be greater than the plasmadensity overlying and toward the periphery of the lower electrode 103.Consequently, there will be more plasma-to-substrate reaction at innerregions of the substrate relative to outer regions of the substrate.

It should be understood that the RF power transmission path controldepicted in FIGS. 2A and 2B represent simplified extremes of how theplasma density profile can be manipulated through the present invention.Furthermore, it should be appreciated that the tuning elements withinthe various RF transmission paths, as afforded by the present invention,can be controlled to manipulate the plasma density profile relative tothe substrate in essentially any conceivable manner. To enhanceflexibility with respect to how the plasma density profile can bemanipulated, the various return electrodes are positioned with respectto the transmit electrode about the volume within which the plasma isgenerated such that various RF power transmission paths are spatiallydistributed relative to the transmit electrode, and hence relative tothe substrate supported by the transmit electrode.

As described in more detail below with respect to FIG. 3, the plasmaprocessing system 100 of FIGS. 1A-2B can further include a controlsystem defined to control the various tuning elements, thus enablingcontrol of RF power transmission through the spatially distributed RFpower transmission paths. In one embodiment, the RF power transmissionpaths can be controlled such that a target plasma density profile isestablished relative to the transmit electrode. Additionally, one ormore control signals indicative of the existing plasma density profilecan be used to determine tuning element adjustments necessary tomaintain the target plasma density profile within the chamber. In oneembodiment, the control signals are acquired and transmitted byappropriately defined metrology disposed at numerous spatially dispersedlocations through the volume in which the plasma is generated.

FIG. 3 is an illustration showing a system 300 for controlling a plasmadensity profile relative to a substrate, in accordance with oneembodiment of the present invention. The system 300 includes the plasmachamber 101, the matching network 115, and the RF power source 117, aspreviously described with respect to FIGS. 1A-2B. As previouslydescribed, a number of RF power transmission paths extend from the RFpower source 117 through the matching network 115, through the transmitelectrode within the chamber 101, through the plasma within the chamber101, to a number of spatially dispersed return electrodes within thechamber 101. The amount of RF power transmitted along a particular RFpower transmission path directly influences a plasma density within avicinity of the particular RF power transmission path. Also, a number ofRF power tuning elements are respectively disposed within the number ofRF power transmission paths. Each of the tuning elements are capable ofbeing manipulated to adjust an amount of RF power transmitted along theRF power transmission path within which the tuning element is disposed.

Additionally, the system 300 includes a computing system 301 defined toreceive plasma density monitoring signals from the plasma chamber 101,as indicated by arrow 303. The computing system is defined to generateand transmit control signals to the various tuning elements along thedifferent RF power transmission paths. The control signals serve tocontrol the various tuning elements such that plasma densities withinthe vicinity of the corresponding RF power transmission paths areadjusted to maintain the plasma density profile overlying the substratein accordance with a target plasma density profile stored in thecomputing system 301.

In one embodiment, metrology is provided for directly measuring theplasma density at various spatially dispersed locations over the topsurface of the substrate. These directly measured plasma densitiesrepresent the monitoring signals provided from the chamber 101 to thecomputing system 301. In another embodiment, metrology is provided formeasuring the bias voltage at various dispersed locations across the topsurface of the substrate. These measured bias voltages represent themonitoring signals provided from the chamber 101 to the computing system301. The computing system 301 includes a correlation between measuredbias voltage on the substrate and plasma density over the substrate. Thecomputing system 301 is defined to use the received measured biasvoltages and correlation to determine an existing plasma density profileover the top surface of the substrate. For example, in one embodiment, arequired bias voltage profile across the substrate corresponding to atarget plasma density profile is provided as input to the computingsystem 301. The computing system 301 monitors the bias voltage on thesubstrate to determine if the required bias voltage profile is presenton the substrate. The computing system 301 transmits appropriate tuningelement control signals to adjust the RF power transmission paths asnecessary to match the measured bias voltage profile on the substrate tothe required bias profile. If the required bias voltage profile ismaintained across the substrate, the plasma density profile overlyingthe substrate will correspond to the target plasma density profile.

As previously mentioned, the various tuning elements within the RF powertransmission paths can be either adjustable capacitive elements oradjustable inductive elements. Those skilled in the art will appreciatethat capacitive and inductive effects in transmission of RF power can beprovided by physical structures within the RF transmission channels.Thus, manipulation of these physical structures within the RFtransmission channels can be used to manipulate the correspondingcapacitive or inductive effects provided by the physical structures. Inone embodiment, the tuning element control signals generated andtransmitted by the computing system 301 are routed to servos that aredefined to mechanically adjust the physical structures defining theadjustable capacitive elements or adjustable inductive elements withinthe various RF transmission paths as appropriate.

To demonstrate the operability of the present invention, an exampleplasma process was performed in which the adjustable capacitive elementC1 of FIG. 1B was varied while the other tuning elements were maintainedat a substantially constant value. It should be understood that theparticular process and tuning element settings used this example plasmaprocess were selected for demonstration purposes only. In actualpractice, the present invention can be used within an essentiallyunlimited process window, wherein various process parameters, e.g.,pressure, gas mixture, gas flow rates, bias, tuning element settings,etc., can be set at any value appropriate for the particular plasmaprocess that is being performed. Also, it should also be appreciatedthat in actual practice the results of the plasma process, e.g., etchrates, uniformity, etc., as a function of various tuning elementsettings will be dependent upon the integral effect of other processparameter settings.

Table 1 presents various process parameter and tuning element settingsapplied during the example plasma process. In Table 1, the varioustuning elements are identified by their respective reference number aspreviously presented in FIG. 1B. During the example plasma process, theimpedance matching capacitors 123A-123D and resistors 125A-125E are setto provide an appropriate impedance match so that the generated RF powercan be successfully transmitted through the plasma without adversereflection and interference. FIG. 4 is an illustration showing theresults of the example plasma process as a function of the adjustablecapacitive element C1 setting. In FIG. 4, the average etch rate acrossthe test wafer is shown by curve 401. The three-sigma uniformity acrossthe test wafer is shown by curve 403. The etch rate at the center of thetest wafer is shown by curve 405. Based on the variation in average etchrate, uniformity, and center etch rate as a function of the tuningelement (C1) capacitance, it should be appreciated that the tuningelement (C1) can be adjusted to influence the etch rate results acrossthe wafer. Therefore, the example plasma process demonstrates how theplasma density profile can be controlled by adjusting particular tuningelements such that the amount of RF power transmitted throughcorresponding RF power transmission paths is controlled.

TABLE 1 Example Plasma Process Settings Process Parameter/ TuningElement Setting Pressure 80 mT Gas Mixture Ar at 300 scc/min, CF₄ at 120scc/min, CHF₃ at 40 scc/min, O₂ at 15 scc/min Bias Voltage 220 V TuningElement (C1) VARIABLE Tuning Element (C2) 120 pF Tuning Element (C3) 350pF Tuning Elements (C4 + C5) 56 pF Tuning Element (C6) 220 pF

FIG. 5 is an illustration showing a flowchart of a method forcontrolling a plasma density profile relative to a substrate, inaccordance with one embodiment of the present invention. The methodincludes an operation 501 for applying RF power to a reactant gas togenerate a plasma over a top surface of a substrate. In one embodiment,RF power of multiple frequencies is applied to the reactant gas. Forexample, a higher frequency RF power can be applied for plasma densitygeneration, and a lower frequency RF power can be applied for biasgeneration across the substrate.

The method also includes an operation 503 for controlling an amount ofRF power transmitted through each of a number of RF power transmissionpaths, wherein the RF power transmission paths are spatially dispersedthroughout the plasma relative to the top surface of the substrate.Controlling the amount of RF power transmitted through a particular RFpower transmission path causes a plasma density within a vicinity of theparticular RF power transmission path to be proportionally controlled.In the embodiment where RF power of multiple frequencies is applied tothe reactant gas, each of the multiple frequencies of RF power isindependently controllable through each of the RF power transmissionpaths. In one embodiment, controlling the amount of RF power transmittedthrough the various RF power transmission paths is performed bycontrolling one or more tuning elements within each of the various RFpower transmission paths. As previously discussed, each tuning elementcan be either an adjustable capacitive element or an adjustableinductive element disposed within an RF power transmission path.

The method further includes an operation 505 for measuring a plasmadensity at various spatially dispersed locations over the top surface ofthe substrate. In one embodiment, the plasma densities are measureddirectly. In another embodiment, bias voltages are measured at variousdispersed locations across the substrate. The measured bias voltages arecorrelated to respective plasma densities overlying the top surface ofthe substrate. In an operation 507, the measured plasma densities arecompared to a target plasma density profile defined relative to the topsurface of the substrate. An operation 509 is then performed todetermine adjustments to the controlled amount of RF power transmittedthrough each of the RF power transmission paths as required to make aplasma density profile represented by the measured plasma densitiessubstantially match the target plasma density profile. It should beappreciated that controlling the amount of RF power transmitted througheach of the RF power transmission paths is performed in an automatedmanner to maintain a substantial match between the actual plasma densityprofile and the target plasma density profile.

The RF power transmission tuning elements of the present inventionenable control of substrate uniformity in a wide range of processeswhich vary with process parameters such as power, pressure, and processgases. More specifically, the present invention provides a number oftuning elements within the RF power transmission paths through theplasma to affect a change in plasma density profile overlying thesubstrate, and hence affect a change in uniformity across the substrate.Also, the plasma density control capability provided by the presentinvention provides a wider window for process development than whatwould otherwise be constrained by uniformity concerns. Additionally,through proper plasma monitoring and control of the various tuningelements, process uniformity can be controlled from wafer-to-wafer andtool matching can be made easier.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. Therefore,it is intended that the present invention includes all such alterations,additions, permutations, and equivalents as fall within the true spiritand scope of the invention.

1. A method for controlling a plasma density profile relative to asubstrate, comprising: applying radiofrequency (RF) power to a reactantgas to generate a plasma over a top surface of a substrate; andcontrolling an amount of RF power transmitted through each of aplurality of RF power transmission paths, wherein the RF powertransmission paths are spatially dispersed throughout the plasmarelative to the top surface of the substrate, wherein controlling theamount of RF power transmitted through a particular RF powertransmission path causes a plasma density within a vicinity of theparticular RF power transmission path to be proportionally controlled.2. A method for controlling a plasma density profile relative to asubstrate as recited in claim 1, further comprising: measuring a plasmadensity at various spatially dispersed locations over the top surface ofthe substrate; comparing the measured plasma densities to a targetplasma density profile defined relative to the top surface of thesubstrate; and determining adjustments to the controlled amount of RFpower transmitted through each of the plurality of RF power transmissionpaths as required to make a plasma density profile represented by themeasured plasma densities substantially match the target plasma densityprofile.
 3. A method for controlling a plasma density profile relativeto a substrate as recited in claim 2, wherein measuring the plasmadensity at various spatially dispersed locations over the top surface ofthe substrate includes measuring bias voltages present on the substrateat various dispersed locations across the substrate, and correlating themeasured bias voltages to respective plasma densities overlying the topsurface of the substrate.
 4. A method for controlling a plasma densityprofile relative to a substrate as recited in claim 1, whereincontrolling the amount of RF power transmitted through each of theplurality of RF power transmission paths is performed in an automatedmanner to maintain a substantial match between an actual plasma densityprofile and a target plasma density profile relative to the top surfaceof the substrate.
 5. A method for controlling a plasma density profilerelative to a substrate as recited in claim 1, wherein controlling theamount of RF power transmitted through each of the plurality of RF powertransmission paths is performed by controlling one or more tuningelements within each of the plurality of RF power transmission paths,each tuning element being either an adjustable capacitive element or anadjustable inductive element.
 6. A method for controlling a plasmadensity profile relative to a substrate as recited in claim 1, whereinRF power of multiple fixed frequencies is applied to the reactant gas,each of the multiple fixed frequencies of RF power being independentlycontrollable through each of the plurality of RF power transmissionpaths.
 7. A method for controlling a plasma density profile relative toa substrate, comprising: transmitting radiofrequency (RF) power from atransmit electrode to a reactant gas to a number of return electrodes,whereby transmission of the RF power to the reactant gas transforms thereactant gas into a plasma over a top surface of a substrate, whereby aplurality of RF power transmission paths are established from thetransmit electrode to the number of return electrodes; and controlling anumber of tuning elements within each of the plurality of RF powertransmission paths to control an amount of RF power transmitted througheach of the plurality of RF power transmission paths, wherein the numberof tuning elements includes at least one adjustable capacitive elementand at least one adjustable inductive element.
 8. A method forcontrolling a plasma density profile relative to a substrate as recitedin claim 7, wherein the number of return electrodes are electricallyconnected to reference ground potential.
 9. A method for controlling aplasma density profile relative to a substrate as recited in claim 7,wherein the RF power transmission paths are spatially dispersedthroughout the plasma relative to the top surface of the substrate. 10.A method for controlling a plasma density profile relative to asubstrate as recited in claim 7, wherein controlling the amount of RFpower transmitted through a particular RF power transmission path causesa plasma density within a vicinity of the particular RF powertransmission path to be proportionally controlled.
 11. A method forcontrolling a plasma density profile relative to a substrate as recitedin claim 7, controlling one or more of the at least one adjustablecapacitive elements within a portion of an RF power transmission pathextending from the transmit electrode to a chamber wall electricallyconnected to a reference ground potential.
 12. A method for controllinga plasma density profile relative to a substrate as recited in claim 7,controlling one or more of the at least one adjustable capacitiveelements within a portion of an RF power transmission path extendingfrom a matching network to the transmit electrode.
 13. A method forcontrolling a plasma density profile relative to a substrate as recitedin claim 7, controlling one or more of the at least one adjustableinductive elements within a portion of an RF power transmission pathextending from a chamber wall to a reference ground potential.
 14. Amethod for controlling a plasma density profile relative to a substrateas recited in claim 7, controlling one or more of the at least oneadjustable inductive elements within a portion of an RF powertransmission path extending from a matching network to the transmitelectrode.